TC518129BFWL-80V datasheet by Toshiba.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | TC518129BFWL-80V |
|---|---|
| Datasheet | TC518129BFWL-80V TC518129BPL-70V Datasheet (PDF) |
| File Size | 473.01 KB |
| Manufacturer | Toshiba |
| Description | SILICON GATE CMOS PSEUDO STATIC RAM |
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The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B-V operates from a single power supply of 2.7 - 5.5V.
| Part Number | Description |
|---|---|
| TC518129BFWL-80 | CMOS Pseudo Static RAM |
| TC518129BFWL-80L | CMOS Pseudo Static RAM |
| TC518129BFWL-10 | CMOS Pseudo Static RAM |
| TC518129BFWL-10L | CMOS Pseudo Static RAM |
| TC518129BFWL-10V | SILICON GATE CMOS PSEUDO STATIC RAM |
| TC518129BFWL-70 | CMOS Pseudo Static RAM |
| TC518129BFWL-70L | CMOS Pseudo Static RAM |
| TC518129BFWL-70V | SILICON GATE CMOS PSEUDO STATIC RAM |
| TC518129BFL-10 | CMOS Pseudo Static RAM |
| TC518129BFL-10L | CMOS Pseudo Static RAM |
