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TC518512FL-10LV Datasheet Silicon Gate CMOS Pseudo Static Ram

Manufacturer: Toshiba

Overview: TOSHIBA TC518512PL/FL/FIL!fRL70LV/80LV/I0LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.

The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed ar}QJow power storage.

The TC518512PL-LVoperates from a single 3.0V - 5.5V power supply.

Key Features

  • a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin small outline package (forward type, reverse type). Features.
  • Organization: 524,288 words x 8 bits.
  • Low voltage op.

More Datasheets from Toshiba

Part Number Description
TC518512FL-10LT SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FL-10 SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FL-10DR SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FL-70 SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FL-70DR SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FL-70LT SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FL-70LV SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FL-80 SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FL-80DR SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FL-80LT SILICON GATE CMOS PSEUDO STATIC RAM

TC518512FL-10LV Distributor