TC51864PL-10 - SILICON GATE CMOS PSEUDO STATIC RAM

This page provides the datasheet information for the TC51864PL-10, a member of the TC51864PL-85 SILICON GATE CMOS PSEUDO STATIC RAM family.

Product Overview

Toshiba

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Datasheet Details

Part number	TC51864PL-10
Manufacturer	Toshiba
File Size	311.09 KB
Description	SILICON GATE CMOS PSEUDO STATIC RAM
Datasheet	TC51864PL-10 Datasheet
Additional preview pages of the TC51864PL-10 datasheet.

TC51864PL-10 Product details

Description

The TC51864PL is a 512K bit high speed CMOS pseudo static RAM organized as 65,536 words by 8 bits.

The TC51864PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.

Features

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC51864PL is available in a 32-pin, 0.6 inch width plastic DIP, and a small outline plastic flat package. Features.
Organization: 65,536 words x 8 bits.
Single 5V power supply.
Fast access time TC51864 Family -85 -10 tCEA CE Access Time tOEA OE.

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Published: Feb 17, 2017 |