TC51V8512AFT-15 - SILICON GATE CMOS PSEUDO STATIC RAM

This page provides the datasheet information for the TC51V8512AFT-15, a member of the TC51V8512AF-12 SILICON GATE CMOS PSEUDO STATIC RAM family.

Product Overview

Toshiba

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Datasheet Details

Part number	TC51V8512AFT-15
Manufacturer	Toshiba
File Size	301.13 KB
Description	SILICON GATE CMOS PSEUDO STATIC RAM
Datasheet	TC51V8512AFT-15 Datasheet
Additional preview pages of the TC51V8512AFT-15 datasheet.

TC51V8512AFT-15 Product details

Description

The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.

The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high s~ed and low power storage.

Features

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. The TC51V8512AF is available in a 32-pin small outline plastic flat package, and a thin small outline package (forward type, reverse type). Features.
Organization: 524,288 words x 8 bits.
Low voltage function: 3.0V±10%.
Data re.

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Published: Feb 15, 2017 |