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TC551001AFTI-10L - SILICON GATE CMOS STATIC RAM

Download the TC551001AFTI-10L datasheet PDF (TC551001API-85L included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon gate cmos static ram.

Description

The TC551001API is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply.

Features

  • with an operating current of 5mNMHz (typ. ) and a minimum cycle time of 85ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2~ typically. The TC551001API has three control inputs. Chip enable inputs (CE1, CE2) allow for device selection and data retention control, while an output enable input (OE) provides fast memory access. The TC551001API is suitable for use in microprocessor systems where high speed, low power, and.

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Note: The manufacturer provides a single datasheet file (TC551001API-85L-Toshiba.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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TOSHIBA SILICON GATE CMOS TC55100lAPI/AFI/AFIl/ATRI-85L/IOL 131,072 WORD x 8 BIT STATIC RAM Description The TC551001API is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mNMHz (typ.) and a minimum cycle time of 85ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2~ typically. The TC551001API has three control inputs. Chip enable inputs (CE1, CE2) allow for device selection and data retention control, while an output enable input (OE) provides fast memory access.
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