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TC551664J-20 - SILICON GATE CMOS STATIC RAM

This page provides the datasheet information for the TC551664J-20, a member of the TC551664J-15 SILICON GATE CMOS STATIC RAM family.

Datasheet Summary

Description

The TCEib 166L1-) is Gt 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and opemtfyj from a ~;ingle 5V supply.

Toshiba's advanced CMOS technology and circuit design enable high speed operation.

Features

  • low power dissipation when the device is deselected using chip enable (CE), and has an output Hf1alJle Input (OE:.1 fOt' fast memory access. Byte access is supported by upper and lower byte controls. The TCS~)1664J is suitable for use in high speed.

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Datasheet preview – TC551664J-20

Datasheet Details

Part number TC551664J-20
Manufacturer Toshiba
File Size 243.28 KB
Description SILICON GATE CMOS STATIC RAM
Datasheet download datasheet TC551664J-20 Datasheet
Additional preview pages of the TC551664J-20 datasheet.

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Full PDF Text Transcription

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TOSHIBA 11:551664]-15/20/25 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TCEib 166L1-) is Gt 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and opemtfyj from a ~;ingle 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The I Uh1664,J features low power dissipation when the device is deselected using chip enable (CE), and has an output Hf1alJle Input (OE:.1 fOt' fast memory access. Byte access is supported by upper and lower byte controls. The TCS~)1664J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are 11 L compatible.
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