TC55257BFL-10LV - SILICON GATE CMOS STATIC RAM

This page provides the datasheet information for the TC55257BFL-10LV, a member of the TC55257BFLLV SILICON GATE CMOS STATIC RAM family.

Product Overview

Toshiba

Part number	TC55257BFL-10LV
Manufacturer	Toshiba
File Size	272.29 KB
Description	SILICON GATE CMOS STATIC RAM
Datasheet	TC55257BFL-10LV Datasheet
Additional preview pages of the TC55257BFL-10LV datasheet.

The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply.

with an operating current of 5mNMHz fup. ) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 2J,lA at room tem- perature. The TC55257BPL has two control inputs. Chip enable (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access. The TC55257BPL is suitable for use in microprocessor systems where high speed, low power, and battery backup are.

Other Datasheets by Toshiba

Published: Feb 19, 2017 |