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TC55257CTRI-10 - SILICON GATE CMOS STATIC RAM

This page provides the datasheet information for the TC55257CTRI-10, a member of the TC55257CPI-85 SILICON GATE CMOS STATIC RAM family.

Description

The TC55257CPI is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply.

Features

  • with an operating current of 5mNMHz i!YP. ) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 21lA at room temperature. The TC55257CPI has two control inputs. Chip enable (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access. The TC55257CPI is suitable for use in microprocessor systems where high speed, low power, and battery backup are r.

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Datasheet Details

Part number TC55257CTRI-10
Manufacturer Toshiba
File Size 236.10 KB
Description SILICON GATE CMOS STATIC RAM
Datasheet download datasheet TC55257CTRI-10 Datasheet
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Full PDF Text Transcription

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TOSHIBA 1l:55257CPI/CF1/CSPI/CF1l/C1lU~5/10 SILICON GATE CMOS PRELIMINARY 32,768 WORD x 8 BIT STATIC RAM Description The TC55257CPI is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mNMHz i!YP.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 21lA at room temperature. The TC55257CPI has two control inputs. Chip enable (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access.
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