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TC55417P-45 - CMOS STATIC RAM

Download the TC55417P-45 datasheet PDF (TC55417P-35 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for cmos static ram.

Description

The TC55417P is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5

volt supply.

Features

  • with a maximum access time of 35ns/45ns and maximum operating current of 80mA/60mA at minimum cycle time. The TC55417P also features an automatic stand.
  • by mode. When deselected by Chip Enable (CE), the operating current is reduced to lOrnA. The TC55417P is suitable for use in cache memory and high speed storage, where high speed/high density are required. The TC55417P is molded in a 24 pin standard plastic package with 0.3 inch width for high density assembly. The TC55417P is fabricated with.

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Note: The manufacturer provides a single datasheet file (TC55417P-35-Toshiba.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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TOSHIBA MOS MEMORY PRODUCT 16,384 WORD X 4 BIT CMOS STATIC RAM SILICON GATE CMOS TC55417 P-35 TC55417 P-45 DESCRIPTION The TC55417P is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5·volt supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum access time of 35ns/45ns and maximum operating current of 80mA/60mA at minimum cycle time. The TC55417P also features an automatic stand·by mode. When deselected by Chip Enable (CE), the operating current is reduced to lOrnA. The TC55417P is suitable for use in cache memory and high speed storage, where high speed/high density are required.
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