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TC55464AP-25 - SILICON GATE CMOS STATIC RAM

Download the TC55464AP-25 datasheet PDF (TC55464AP-15 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon gate cmos static ram.

Description

The TC55464AP/AJ is a 262,144 bit high speed CMOS static random access memory organized as 65,536 words by 4 bits and operated from a single 5V supply.

Toshiba's advanced CMOS technology and circuit design enable high speed operation.

Features

  • low power dissipation when the device is deselected using chip enable (CE). Also, the device power between memory accesses is reduced by an automatic power down circuit. The TC55464AP/AJ is suitable for use in high speed.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC55464AP-15-Toshiba.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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TOSHIBA 1l:55464lU?/AJ-15/20/25/35 SILICON GATE CMOS 65,536 WORD x 4 BIT CMOS STATIC RAM Description The TC55464AP/AJ is a 262,144 bit high speed CMOS static random access memory organized as 65,536 words by 4 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The TC55464AP/AJ features low power dissipation when the device is deselected using chip enable (CE). Also, the device power between memory accesses is reduced by an automatic power down circuit. The TC55464AP/AJ is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TIL compatible. The TC55464AP/AJ is available in a 300mil width, 24-pin DIP and SOJ suitable for high density surface assembly.
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