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TC5561P-55 - CMOS STATIC RAM

This page provides the datasheet information for the TC5561P-55, a member of the TC5561P CMOS STATIC RAM family.

Datasheet Summary

Description

The TC5561 P is a 65,536 bit high speed static random access memory organized as 65,536 words by 1 bit using CMOS technology, and Operated from a single 5-volt supply.

Features

  • with a maximum access time of 55ns/70ns and maximum operating current of 100mA at minimum cycle time. The TC5561 P also features an automatic stand-by mode. When deselected by Chip Enable (CE), the.

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Datasheet preview – TC5561P-55

Datasheet Details

Part number TC5561P-55
Manufacturer Toshiba
File Size 171.24 KB
Description CMOS STATIC RAM
Datasheet download datasheet TC5561P-55 Datasheet
Additional preview pages of the TC5561P-55 datasheet.

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TOSHIBA MOS MEMORY PRODUCT 65,536 WORD X 1 BIT CMOS STATIC RAM SILICON GATE CMOS TC5561 P-55 TC5561 P-70 DESCRIPTION The TC5561 P is a 65,536 bit high speed static random access memory organized as 65,536 words by 1 bit using CMOS technology, and Operated from a single 5-volt supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum access time of 55ns/70ns and maximum operating current of 100mA at minimum cycle time. The TC5561 P also features an automatic stand-by mode. When deselected by Chip Enable (CE), the FEATURES • Fast access time: TC5561 P-55 55ns(MAX.) TC5561 P-70 70ns(MAX.) "Low power dissipation: Operation 1OOmA(MAX.) Standby1 OOJLA(MAX.) e 5V single power supply PIN CONNECTION (TOP VIEW) TC5 ~ti iF AU A, II.".
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