TC55B328J-12
Description
The TC55B328P/J is a 262,144 bit high speed Bi CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V supply. Toshiba's Bi CMOS technology and advanced circuit design enable high speed operation.
The TC55B328P/J features low power dissipation when the device is deselected using chip enable (GE) and has an output enable input (OE) for fast memory access.
The TC55B328P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TIL patible.
The TC55B328P/J is available in a 300mil width, 28-pin DIP and SOJ suitable for high density surface assembly.
Features
- Fast access time
- TC55B328P/J-10 10ns (max.)
- TC55B328P/J-12 12ns (max.)
- Low power dissipation
- Operation:
- TC55B328P/J-10 170m A (max.)
- TC55B328P/J-12 170m A (max.)
- Standby:
15m A (max.)
- Single 5V...
