TC55B329J-12 Datasheet PDF (32K x 9-Bit BiCMOS Static RAM)

TC55B329J-12 - 32K x 9-Bit BiCMOS Static RAM

This page provides the datasheet information for the TC55B329J-12, a member of the TC55B329P 32K x 9-Bit BiCMOS Static RAM family.

Description

The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply.

Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.

Features

low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access. The TC55B329P/J is suitable for use in high speed.

Datasheet Details

Part number	TC55B329J-12
Manufacturer	Toshiba
File Size	228.24 KB
Description	32K x 9-Bit BiCMOS Static RAM
Datasheet	TC55B329J-12 Datasheet
Additional preview pages of the TC55B329J-12 datasheet.

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Full PDF Text Transcription

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TOSHIBA 1l:55B329P/]-10/12 SILICON GATE BiCMOS 32,768 WORD x 9 BIT BiCMOS STATIC RAM Description The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation. The TC55B329P/J features low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access. The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TTL compatible. The TC55B329P/J is available in a 300mil width, 32-pin DIP and SOJ suitable for high density surface assembly.

Published: Feb 17, 2017 |