TC55B4256J
Description
The TC55B4256J is a 1,048,576 bit high speed Bi CMOS static random access memory organized as 262,144 words by 4 bits and operated from a single 5V supply. Toshiba's Bi CMOS technology and advanced circuit design enable high speed operation.
The TC55B4256J features low power dissipation when the device is deselected using chip enable (CE). The TC55B4256J is suitable for use in applications where high speed is required such as cache memory, high speed storage, and main memory. All inputs and outputs are TIL patible. The TC55B4256J is available in a 400mil width, 28-pin SOJ suitable for high density surface assembly.
Features
- Fast access time
- TC55B4256J-12 12ns (max.)
- TC55B4256J-15 15ns (max.)
- TC55B4256J-20 20ns (max.)
- Low power dissipation
- Operation:
- TC55B4256J-12 130m A (max.)
- TC55B4256J-15 130m A (max.)
- TC55B4256J-20 130m A (max.)
- Standby:
12m A (max.)
- Single 5V power supply: 5V±10%
- Fully static operation
- Inputs and outputs TIL patible
-...
