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TC55B8128P - 128K x 4-Bit BiCMOS Static RAM

General Description

The TC55B8128P/J is a 1,048,576 bit high speed BiCMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V supply.

Toshiba's BiCMOS technology and advanced circuit design enable.!:!!9h speed operation.

Key Features

  • low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access. The TC55B8128P/J is suitable for use in high speed.

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Datasheet Details

Part number TC55B8128P
Manufacturer Toshiba
File Size 203.51 KB
Description 128K x 4-Bit BiCMOS Static RAM
Datasheet download datasheet TC55B8128P Datasheet

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Other Datasheets by Toshiba

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TC55B8128P-12 128K x 4-Bit BiCMOS Static RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA 1l:55B8128P/]-12/15/20 SILICON GATE BiCMOS 131,072 WORD x 8 BIT BiCMOS STATIC RAM Description The TC55B8128P/J is a 1,048,576 bit high speed BiCMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable.!:!!9h speed operation. The TC55B8128P/J features low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access. The TC55B8128P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TIL compatible. The TC55B8128P/J is available in a 400mil width, 32-pin DIP and SOJ suitable for high density surface assembly.