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TC55V1864FT-10 - 18-Bit CMOS SRAM

This page provides the datasheet information for the TC55V1864FT-10, a member of the TC55V1864J-10 18-Bit CMOS SRAM family.

Description

The TC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V supply.

Toshiba's advanced CMOS technology and circuit design enable hJ9!:l speed operation.

Features

  • low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access. Byte access is supported by upper and lower byte controls. The TC55V1864J/FT is suitable for use in high speed.

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Datasheet Details

Part number TC55V1864FT-10
Manufacturer Toshiba
File Size 251.64 KB
Description 18-Bit CMOS SRAM
Datasheet download datasheet TC55V1864FT-10 Datasheet
Additional preview pages of the TC55V1864FT-10 datasheet.

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Full PDF Text Transcription

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TOSHIBA 1l:55T1864J/F1l-10/12/15 SILICON GATE CMOS PRELIMINARY 65,536 WORD x 18 BIT CMOS STATIC RAM Description The TC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V supply. Toshiba's advanced CMOS technology and circuit design enable hJ9!:l speed operation. The TC55V1864J/FT features low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access. Byte access is supported by upper and lower byte controls. The TC55V1864J/FT is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are LVTTL compatible.
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