TC571000D - SILICON STACKED GATE MOS

Toshiba

Download the TC571000D datasheet PDF. This datasheet also covers the TC571001D variant, as both devices belong to the same silicon stacked gate mos family and are provided as variant models within a single manufacturer datasheet.

Key Features

with a maximum operating current of 30mA/ 5.0MHz and access time of 200ns/250ns. The programming times of the TC57l000D/TC57l00lD except overhead times of EPROM programmer is only 14 seconds by using the high speed programming algorithm.

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TC571000D silicon stacked gate mos by Toshiba - Datasheet Preview — Note: The manufacturer provides a single datasheet file (TC571001D-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	TC571000D
Manufacturer	Toshiba
File Size	376.24 KB
Description	SILICON STACKED GATE MOS
Datasheet	TC571000D Datasheet

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Other Datasheets by Toshiba

Part Number	Description
TC571000D-20	SILICON STACKED GATE MOS
TC571000D-25	SILICON STACKED GATE MOS
TC571001D	SILICON STACKED GATE MOS
TC571001D-20	SILICON STACKED GATE MOS
TC571001D-25	SILICON STACKED GATE MOS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TOSHIBA MOS MEMORY PRODUCT 1 MEGA BIT (131 ,072 WORD X 8 BIT) SILICON STACKED GATE MOS CMOS U.V. Erasable & Electrically Programmable Read Only Memory TC5710000-20, TC571 0000-25 TC571 0010-20, TC571 0010-25 IOESCRIPTIONj The TC57l000D/TC57l00lD is a 131,072 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. The TC57l000D is JEDEC standard pin configuration and the TC57l00lD is compatible with 28 pin It-! bit Mask ROM. Both products are packed in 32 pin standard cerdip package. TC57l000D/TC57l00lD is fabricated with the CMOS technology. Advanced circuit techniques provide both high speed and low power features with a maximum operating current of 30mA/ 5.0MHz and access time of 200ns/250ns.