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TC57256D-25 - CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABEL READ ONLY MEMORY

Download the TC57256D-25 datasheet PDF. This datasheet also covers the TC57256D-20 variant, as both devices belong to the same cmos uv erasable and electrically programmabel read only memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The TC57256D is a 32,768 word X8 bit CMOS ultraviolet light erasable and electrically programmable read only memory.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC57256D-20-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TC57256D-25
Manufacturer Toshiba
File Size 315.62 KB
Description CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABEL READ ONLY MEMORY
Datasheet download datasheet TC57256D-25 Datasheet

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Other Datasheets by Toshiba

Part Number Description
TC57256D-20 CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABEL READ ONLY MEMORY
TC57256AD CMOS ultraviolet light erasable and electrically programmable read only memory
TC57256AD-15 CMOS ultraviolet light erasable and electrically programmable read only memory
TC57256AD-20 CMOS ultraviolet light erasable and electrically programmable read only memory
TC571000D SILICON STACKED GATE MOS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TOSHIBA MOS MEMORY PRODUCT 32,768 WORD X 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABEL READ ONLY MEMORY TC57256D-20 TC57256D-25 SILICON STACKED GATE MOS DESCRIPTION The TC57256D is a 32,768 word X8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. For read operation, the TC57256D's access time is 200ns, and the TC57256D operates from a single 5-volt power supply and has low power standby mode which reduces the power dissipation without increasing access time. The standby mode is achieved by applying a TTL-high level signal to the CE input. Advanced CMOS technology reduces the maximum active current to 30 mA/5MHz and standby current to 100pA. For program operation, the programming is achiev- ed by using the high speed programming mode.