CMOS Uv Erasable And Electrically Programmabel Read Only Memory
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | TC57256D-25 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 315.62 KB |
| Description | CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABEL READ ONLY MEMORY |
| Datasheet | TC57256D-25 TC57256D-20 Datasheet (PDF) |
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The TC57256D is a 32,768 word X8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. For read operation, the TC57256D's access time is 200ns, and the TC57256D operates from a single 5-volt power supply and has low power standby mode which reduces the power dissipation without increasing access time. The standby mode is achieved by applying a TTL-high level signal to the CE input.
| Part Number | Description |
|---|---|
| TC57256D-20 | CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABEL READ ONLY MEMORY |
| TC57256AD | CMOS ultraviolet light erasable and electrically programmable read only memory |
| TC57256AD-15 | CMOS ultraviolet light erasable and electrically programmable read only memory |
| TC57256AD-20 | CMOS ultraviolet light erasable and electrically programmable read only memory |
| TC571000D | SILICON STACKED GATE MOS |
| TC571000D-20 | SILICON STACKED GATE MOS |
| TC571000D-25 | SILICON STACKED GATE MOS |
| TC571001D | SILICON STACKED GATE MOS |
| TC571001D-20 | SILICON STACKED GATE MOS |
| TC571001D-25 | SILICON STACKED GATE MOS |
