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TC58BVG2S0HTA00 Datasheet

Manufacturer: Toshiba
TC58BVG2S0HTA00 datasheet preview

Datasheet Details

Part number TC58BVG2S0HTA00
Datasheet TC58BVG2S0HTA00-Toshiba.pdf
File Size 347.62 KB
Manufacturer Toshiba
Description 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
TC58BVG2S0HTA00 page 2 TC58BVG2S0HTA00 page 3

TC58BVG2S0HTA00 Overview

The device has a 4224-byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments. The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: The TC58BVG2S0HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

TC58BVG2S0HTA00 Key Features

  • Organization
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Mul
  • Mode control Serial input/output mand control
  • Number of valid blocks Min 2008 blocks
  • Power supply VCC = 2.7V to 3.6V
  • Access time
  • Program/Erase time Auto Page Program
  • Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby
  • Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
  • 8bit ECC for each 528Byte is implemented on the chip
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