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TC58DAM72A1FT00 Datasheet (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM

Manufacturer: Toshiba

Download the TC58DAM72A1FT00 datasheet PDF. This datasheet also includes the TC58DVMxxx variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (TC58DVMxxx_Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TC58DAM72A1FT00
Manufacturer Toshiba
File Size 369.62 KB
Description (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
Download Download datasheet TC58DAM72A1FT00 Download (PDF)

General Description

The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks.

The device uses dual power supplies (2.7 V to 3.6 V for VCC and 1.65 V to 1.95 V for VCCQ ).

The device has a 528-byte/264-words static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte/256-words increments.

Overview

TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M u 8 BITS/8M x 16BITS) CMOS NAND.

Key Features

  • x Organization TC58DxM72A1xxxx Memory cell allay 528 u 32K u 8 Register 528 u 8 Page size 528 bytes Block size (16K  512) bytes x Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read x Mode control Serial input/output Command control x Power supply TC58DVM72x1xxxx Vcc: 2.7V to 3.6V Vccq: 2.7V to 3.6V x Program/Erase Cycles 1E5 cycle (with ECC) x Access time Cell array to register 25 Ps max Serial Read Cycle 50 ns min x Operating current Read (50 ns cycle) 10 mA typ.

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