TC58DAM72F1FT00 datasheet by Toshiba.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | TC58DAM72F1FT00 |
|---|---|
| Datasheet | TC58DAM72F1FT00 TC58DVMxxx Datasheet (PDF) |
| File Size | 369.62 KB |
| Manufacturer | Toshiba |
| Description | (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
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The device uses dual power supplies (2.7 V to 3.6 V for VCC and 1.65 V to 1.95 V for VCCQ ). The device has a 528-byte/264-words static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte/256-words increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes:.
| Part Number | Description |
|---|---|
| TC58DAM72A1FT00 | (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
| TC58DVG02A1F00 | 1 Gbit (128M x *8its) CMOS NAND EPROM |
| TC58DVG02A1FI0 | 1 Gbit (128M x *8its) CMOS NAND EPROM |
| TC58DVG3S0ETA00 | 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM |
| TC58DVM72A1FT00 | (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
| TC58DVM72F1FT00 | (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
| TC58DVM92A1FT0 | 512M-Bit CMOS NAND EPROM |
| TC58DVM92A1FT00 | 512M-Bit CMOS NAND EPROM |
| TC58DVM92A5TA00 | 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM |
| TC58DVM92A5TAI0 | 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM |
