TC58DVG3S0ETA00 datasheet by Toshiba.
| Part number | TC58DVG3S0ETA00 |
|---|---|
| Datasheet | TC58DVG3S0ETA00-Toshiba.pdf |
| File Size | 608.93 KB |
| Manufacturer | Toshiba |
| Description | 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM |
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The device has two 4224-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4224-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: The TC58DVG3S0E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.
| Part Number | Description |
|---|---|
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| TC58DVM72F1FT00 | (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
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| TC58DVM92A1FT00 | 512M-Bit CMOS NAND EPROM |
| TC58DVM92A5TA00 | 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM |
| TC58DVM92A5TAI0 | 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM |
| TC58DAM72A1FT00 | (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
| TC58DAM72F1FT00 | (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
