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TC58DVG3S0ETA00 - 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM

General Description

The TC58DVG3S0E is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.

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TOSHIBA CONFIDENTIAL TC58DVG3S0ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58DVG3S0E is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks. The device has two 4224-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4224-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages). The TC58DVG3S0E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.