Description
The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
Features
- Organization Memory cell array Register Page size Block size.
- x8 2112 × 64K × 8 2112 × 8 2112 bytes (128K + 4K) bytes
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read Mode control Serial input/output Command control Number of valid blocks Min 1004 blocks Max 1024 blocks Power supply VCC = 2.7V to 3.6V Access time Cell array to register Serial Read Cycle Program/Erase time Au.
TC58NVG0S3ETA00 Datasheet
