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TC58NVG2S0FTA00 Datasheet

Manufacturer: Toshiba
TC58NVG2S0FTA00 datasheet preview

TC58NVG2S0FTA00 Details

Part number TC58NVG2S0FTA00
Datasheet TC58NVG2S0FTA00 Datasheet PDF (Download)
File Size 515.34 KB
Manufacturer Toshiba
Description 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
TC58NVG2S0FTA00 page 2 TC58NVG2S0FTA00 page 3

TC58NVG2S0FTA00 Overview

The device has two 4320-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4320-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 14 Kbytes: The TC58NVG2S0F is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

TC58NVG2S0FTA00 Key Features

  • Organization
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, M
  • Mode control Serial input/output
  • Number of valid blocks Min 2008 blocks Max 2048 blocks
  • Power supply VCC = 2.7V to 3.6V
  • Access time
  • Program/Erase time Auto Page Program Auto Block Erase
  • Operating current Read (25 ns cycle) Program (avg.)
  • Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
  • 4bit ECC for each 512Byte is required

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