TC58NVG2S3ETA00
TC58NVG2S3ETA00 is 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM manufactured by Toshiba.
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIPTION
The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58NVG2S3E is a serial-type memory device which utilizes the I/O pins for both address and data...
