Part TC58NVG2S3ETA00
Description 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
Manufacturer Toshiba
Size 555.41 KB
Toshiba
TC58NVG2S3ETA00

Overview

  • Organization Memory cell array Register Page size Block size
  • x8 2112 × 256K × 8 2112 × 8 2112 bytes (128K + 4K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read Mode control Serial input/output Command control Number of valid blocks Min 4016 blocks Max 4096 blocks Power supply VCC = 2.7V to 3.6V Access time Cell array to register Serial Read Cycle Program/Erase time Auto Page Program Auto Block Erase Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 µs max 25 ns min (CL=100pF) 300 µs/page typ. 2.5 ms/block typ. 30 mA max. 30 mA max 30 mA max 50 µA max * * * * * *
  • Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.) 1