Datasheet Details
| Part number | TC58NVM9S3EBAI4 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 304.67 KB |
| Description | 512M BIT (64M x 8 BIT) CMOS NAND E2PROM |
| Datasheet |
 TC58NVM9S3EBAI4 Datasheet
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| Part number | TC58NVM9S3EBAI4 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 304.67 KB |
| Description | 512M BIT (64M x 8 BIT) CMOS NAND E2PROM |
| Datasheet |
TC58NVM9S3EBAI4 Datasheet
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The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
TC58NVM9S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512M BIT (64M × 8 BIT) CMOS NAND.
| Part Number | Description |
|---|---|
| TC58NVM9S3ETA00 | 512M BIT (64M x 8 BIT) CMOS NAND E2PROM |
| TC58NVM9S3ETAI0 | 512M BIT (64M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG0S3AFT00 | 1 GBit CMOS NAND EPROM |
| TC58NVG0S3AFT05 | 1 GBit CMOS NAND EPROM |
| TC58NVG0S3ETA00 | 1 GBIT (128M X 8 BIT) CMOS NAND E2PROM |
| TC58NVG0S3HBAI4 | 1G BIT (128M x 8-BIT) CMOS NAND E2PROM |
| TC58NVG0S3HBAI6 | 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG0S3HTA00 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG0S3HTAI0 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG1S3BFT00 | 2-GBit CMOS NAND EPROM |