Datasheet Details
| Part number | TC59SM804BFT |
|---|---|
| Manufacturer | Toshiba |
| File Size | 2.78 MB |
| Description | (TC59SM804BFT - TC59SM816BFT) SDRAM |
| Datasheet |
 TC59SM804BFT Datasheet
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Download the TC59SM804BFT datasheet PDF. This datasheet also includes the TC59SM816BFT variant, as both parts are published together in a single manufacturer document.
| Part number | TC59SM804BFT |
|---|---|
| Manufacturer | Toshiba |
| File Size | 2.78 MB |
| Description | (TC59SM804BFT - TC59SM816BFT) SDRAM |
| Datasheet |
TC59SM804BFT Datasheet
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TC59SM816BFT/BFTL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808BFT/BFTL is organized as 8,388,608 words × 4 banks × 8 bits and The TC59SM804BFT/BFTL is organized as 16,777,216 words × 4 banks × 4 bits.
Fully synchronous operations are referenced to the positive edges of clock input and can transfer data up to 143M words per second.
These devices are controlled by commands setting.
www.DataSheet4U.com TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS.
| Part Number | Description |
|---|---|
| TC59SM804BFTL | (TC59SM804BFT - TC59SM816BFT) SDRAM |
| TC59SM804CFT | (TC59SM804CFT - TC59SM816CFT) SDRAM |
| TC59SM804CFTL | (TC59SM804CFT - TC59SM816CFT) SDRAM |
| TC59SM804CMB | (TC59SM804CMB - TC59SM816CMB) SDRAM |
| TC59SM804CMBL | (TC59SM804CMB - TC59SM816CMB) SDRAM |
| TC59SM808BFT | (TC59SM804BFT - TC59SM816BFT) SDRAM |
| TC59SM808BFTL | (TC59SM804BFT - TC59SM816BFT) SDRAM |
| TC59SM808CFT | (TC59SM804CFT - TC59SM816CFT) SDRAM |
| TC59SM808CFTL | (TC59SM804CFT - TC59SM816CFT) SDRAM |
| TC59SM808CMB | (TC59SM804CMB - TC59SM816CMB) SDRAM |