TC59SM816CFTI Datasheet PDF (SDRAM) | Download Toshiba TC59SM816CFTI

TC59SM816CFTI - SDRAM

Description

TC59SM816CFTI is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits.

Fully synchronous operations are referenced to the positive edges of clock input and can transfer data up to 133M words per second.

These devices are controlled by commands setting.

Datasheet Details

Part number	TC59SM816CFTI
Manufacturer	Toshiba
File Size	2.76 MB
Description	SDRAM
Datasheet	TC59SM816CFTI Datasheet
Additional preview pages of the TC59SM816CFTI datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com TC59SM816CFTI-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59SM816CFTI is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits. Fully synchronous operations are referenced to the positive edges of clock input and can transfer data up to 133M words per second. These devices are controlled by commands setting. Each bank are kept active so that DRAM core sense amplifiers can be used as a cache. The refresh functions, either Auto Refresh or Self Refresh are easy to use. By having a programmable Mode Register, the system can choose the most suitable modes which will maximize its performance.

Published: Aug 27, 2006 |