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TC74ACT04F - Hex Inverter

General Description

2.

The TC74ACT04F is an advanced high speed CMOS INVERTER fabricated with silicon gate and double-layer metal wiring C2MOS technology.

It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.

Key Features

  • (1) High speed: tpd = 4.6 ns (typ. ) at VCC = 5.0 V (2) Low power dissipation: ICC = 4.0 µA (max) at Ta = 25.
  • (3) Compatible with TTL inputs: VIL = 0.8 V (max) : VIH = 2.0 V (min) (4) Output current: |IOH|/IOL = 24 mA (min) (VCC = 4.5 V) (5) Balanced propagation delays: tPLH ≈ tPHL (6) Pin and function compatible with 74F04. 4. Packaging SOP14 ©2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1988-10 2020-12-08 Rev.1.0 5. Pin Assignment 6. Marking.

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Full PDF Text Transcription (Reference)

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CMOS Digital Integrated Circuits Silicon Monolithic TC74ACT04F TC74ACT04F 1. Functional Description • Hex Inverter 2. General The TC74ACT04F is an advanced high speed CMOS INVERTER fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. The inputs are compatible with TTL, NMOS and CMOS output voltage levels. All inputs are equipped with protection circuits against static discharge or transient excess voltage. 3. Features (1) High speed: tpd = 4.6 ns (typ.) at VCC = 5.0 V (2) Low power dissipation: ICC = 4.