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TC74HC133AP - 13-Input NAND Gate

Key Features

  • High speed: tpd = 13 ns (typ. ) at VCC = 5 V.
  • Low power dissipation: ICC = 1 μA (max) at Ta = 25°C.
  • High noise immunity: VNIH = VNIL = 28% VCC (min).
  • Output drive capability: 10 LSTTL loads.
  • Symmetrical output impedance: |IOH| = IOL = 4 mA (min).
  • Balanced propagation delays: tpLH ∼.
  • tpHL.
  • Wide operating voltage range: VCC (opr) = 2 to 6 V.
  • Pin and function compatible with 74LS133 Pin Assignment TC74HC133AP TC74HC13.

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Full PDF Text Transcription (Reference)

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TC74HC133AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC133AP, TC74HC133AF 13-Input NAND Gate The TC74HC133A is a high speed CMOS 13-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composes of 7 stages, including a buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Features • High speed: tpd = 13 ns (typ.