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TC74VCXR162543FT Datasheet Low-Voltage 16-Bit Registered Transceiver

Manufacturer: Toshiba

Overview: TC74VCXR162543FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VCXR162543FT Low-Voltage 16-Bit Registered Transceiver with 3.6-V Tolerant Inputs and Outputs The TC74VCXR162543FT is a high-performance CMOS 16-bit registered transceiver. Designed for use in 1.8-V, 2.5-Vor 3.3-V systems, it achieves high-speed operation while maintaining the CMOS low power dissipation. It is also designed with overvoltage tolerant inputs and outputs up to 3.6 V. The TC74VCXR162543FT can be used as two 8-bit transceivers or one 16-bit transceiver. Separate latch-enable (LEAB or (LEBA) and output-enable (OEAB or OEBA) inputs are provided for each register to permit independent control in either direction of data flow. Weight: 0.25 g (typ.) The A-to-B enable (CEAB) input must be low in order to enter data from A or to output data from B. If CEAB is low and LEAB is low, the A-to-B latches are transparent; a subsequent low-to-high transition of LEAB puts the Alatches in the storage mode. With CEAB and OEAB both low, the 3-state B outputs are active and reflect the data present at the output of the A latches. Data flow from B to A is similar but requires using the CEBA, LEBA, and OEBA inputs. When the OE input is high, the outputs are in a high-impedance state. This device is designed to be used with 3-state memory address drivers, etc. The 26-Ω series resistor helps reducing output overshoot and undershoot without external resistor. All inputs are equipped with protection circuits against static discharge.

Key Features

  • (Note).
  • 26-Ω series resistors on outputs.
  • Low-voltage operation: VCC = 1.8 to 3.6 V.
  • High-speed operation: tpd = 4.4 ns (max) (VCC = 3.0 to 3.6 V) : tpd = 5.4 ns (max) (VCC = 2.3 to 2.7 V) : tpd = 9.8 ns (max) (VCC = 1.8 V).
  • Output current: IOH/IOL = ±12 mA (min) (VCC = 3.0 V) : IOH/IOL = ±8 mA (min) (VCC = 2.3 V) : IOH/IOL = ±4 mA (min) (VCC = 1.8 V).
  • Latch-up performance:.
  • 300 mA.
  • ESD performance: Machine model ≥ ±200 V Human body m.