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TC7S66F - Bilateral Switch

Features

  • High speed: tpd = 7 ns (typ. ) @VCC = 5 V.
  • Low power dissipation: ICC = 1 μA (max) @Ta = 25°C.
  • High noise immunity: VNIH = VNIL = 28% VCC (min).
  • Low ON resistance: RON = 100 Ω (typ. ) @VCC = 9 V.
  • Low T. H. D: THD = 0.05% (typ. ) @VCC = 5 V.
  • Pin and function compatible with TC4S66F Absolute Maximum Ratings (Ta = 25°C) TC7S66F TC7S66FU Weight SSOP5-P-0.95 : 0.016 g (typ. ) SSOP5-P-0.65A : 0.006 g (typ. ) Characteristics Symbol Rating Unit DC Su.

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Datasheet preview – TC7S66F

Datasheet Details

Part number TC7S66F
Manufacturer Toshiba
File Size 167.06 KB
Description Bilateral Switch
Datasheet download datasheet TC7S66F Datasheet
Additional preview pages of the TC7S66F datasheet.

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Full PDF Text Transcription

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TC7S66F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7S66F, TC7S66FU Bilateral Switch The TC7S66 is a high Speed C2MOS Bilateral Switch fabricated with silicon gate C2MOS technology. It consists of a high speed switch capable of controlling either digital or analog signals while maintaining the C2MOS low power dissipation. Control input (C) is provided to control the switch. The switch turns ON while the C input is high, and the switch turns OFF while low. Input is equipped with protection circuits against static discharge or transient excess voltage. Features • High speed: tpd = 7 ns (typ.) @VCC = 5 V • Low power dissipation: ICC = 1 μA (max) @Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Low ON resistance: RON = 100 Ω (typ.) @VCC = 9 V • Low T.H.
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