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TC7SG00FE - 2-Input NAND Gate

Features

  • High output current : ±8 mA (min) at VCC = 3.0 V.
  • Super high speed operation : tpd = 2.5 ns (typ. ) at VCC = 3.3 V,15pF.
  • Operating voltage range : VCC = 0.9 to 3.6 V.
  • 5.5-V tolerant inputs.
  • 3.6-V power down protection output. Weight: 0.003 g (typ. ) Marking W1 Product Name Pin Assignment (top view) IN B 1 5 VCC IN A 2 GND 3 4 OUT Y (ESV) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage DC inp.

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Datasheet Details

Part number TC7SG00FE
Manufacturer Toshiba
File Size 200.34 KB
Description 2-Input NAND Gate
Datasheet download datasheet TC7SG00FE Datasheet
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Full PDF Text Transcription

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TC7SG00FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG00FE 2-Input NAND Gate Features • High output current : ±8 mA (min) at VCC = 3.0 V • Super high speed operation : tpd = 2.5 ns (typ.) at VCC = 3.3 V,15pF • Operating voltage range : VCC = 0.9 to 3.6 V • 5.5-V tolerant inputs. • 3.6-V power down protection output. Weight: 0.003 g (typ.) Marking W1 Product Name Pin Assignment (top view) IN B 1 5 VCC IN A 2 GND 3 4 OUT Y (ESV) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.5 to 4.6 V −0.5 to 7.0 V −0.5 to 4.
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