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TC7W00FU - Dual 2-Input NAND Gate

Key Features

  • High Speed.
  • Low power dissipation : tpd = 6ns (typ. ) at VCC = 5V : ICC = 1μA (max) at Ta = 25°C.
  • High noise immunity : VNIH = VNIL = 28% VCC (min).
  • Output drive capability : 10 LSTTL Loads.
  • Symmetrical Output Impedance : |IOH| = IOL= 4mA (min).
  • Balanced propagation delays : tpLH ≈ tpHL.
  • Wide operating voltage range : VCC = 2 to 6 V TC7W00FU TC7W00FK (SM8) Marking SM8 US8 Product Name 7 W 0 0 Lot No. W 00 Weight SSO.

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Datasheet Details

Part number TC7W00FU
Manufacturer Toshiba
File Size 405.00 KB
Description Dual 2-Input NAND Gate
Datasheet download datasheet TC7W00FU Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TC7W00FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7W00FU, TC7W00FK Dual 2-Input NAND Gate Features • High Speed • Low power dissipation : tpd = 6ns (typ.) at VCC = 5V : ICC = 1μA (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28% VCC (min) • Output drive capability : 10 LSTTL Loads • Symmetrical Output Impedance : |IOH| = IOL= 4mA (min) • Balanced propagation delays : tpLH ≈ tpHL • Wide operating voltage range : VCC = 2 to 6 V TC7W00FU TC7W00FK (SM8) Marking SM8 US8 Product Name 7 W 0 0 Lot No. W 00 Weight SSOP8-P-0.65 SSOP8-P-0.50A (US8) : 0.02 g (typ.) : 0.01 g (typ.