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TC7WG00FU - Dual 2-Input NAND Gate

Key Features

  • High output current : ±8 mA (min) at VCC = 3 V.
  • Super high speed operation : tpd = 2.5 ns (typ. ) at VCC = 3.3 V,15pF.
  • Operating voltage range : VCC = 0.9 to 3.6 V.
  • 5.5-V tolerant inputs.
  • 3.6-V power down protection outputs TC7WG00FU TC7WG00FK (SM8) Marking SM8 G 00 Product Name US8 Lot No. WG 00 (US8) Weight: SSOP8-P-0.65 SSOP8-P-0.50A : 0.02 g (typ. ) : 0.01 g (typ. ) Absolute Maximum Ratings (Ta = 25°C) Pin Assignment (top view) C.

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Datasheet Details

Part number TC7WG00FU
Manufacturer Toshiba
File Size 212.05 KB
Description Dual 2-Input NAND Gate
Datasheet download datasheet TC7WG00FU Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TC7WG00FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG00FU, TC7WG00FK Dual 2-Input NAND Gate Features • High output current : ±8 mA (min) at VCC = 3 V • Super high speed operation : tpd = 2.5 ns (typ.) at VCC = 3.3 V,15pF • Operating voltage range : VCC = 0.9 to 3.6 V • 5.5-V tolerant inputs • 3.6-V power down protection outputs TC7WG00FU TC7WG00FK (SM8) Marking SM8 G 00 Product Name US8 Lot No. WG 00 (US8) Weight: SSOP8-P-0.65 SSOP8-P-0.50A : 0.02 g (typ.) : 0.01 g (typ.