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TD62M4503AFN - POWER MOS FET 4CH SINK DRIVER

Datasheet Summary

Features

  • l 4V Drive l Low ON Resistance : RDS (ON) = 0.58 Ω (Typ. ) l Low Leakage Current : IGSS = ±3 µA (Max. ) (VGS = ±16 V) : IGSS = 100 µA (Max. ) (VGS = 60 V) l Enhancement Type : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) l Small Package : SSOP 24 (0.65 mm Pitch) Weight: 0.14 g (Typ. ) BLOCK.

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Datasheet Details

Part number TD62M4503AFN
Manufacturer Toshiba
File Size 108.26 KB
Description POWER MOS FET 4CH SINK DRIVER
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TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI−CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET (2SK1078) × 4 and Diodes (1SS184). FEATURES l 4V Drive l Low ON Resistance : RDS (ON) = 0.58 Ω (Typ.) l Low Leakage Current : IGSS = ±3 µA (Max.) (VGS = ±16 V) : IGSS = 100 µA (Max.) (VGS = 60 V) l Enhancement Type : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) l Small Package : SSOP 24 (0.65 mm Pitch) Weight: 0.14 g (Typ.
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