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TDTC123J - NPN Transistor

Key Features

  • (1) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (2) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (3) Complementary to TDTA123J 3. Packaging and Internal Circuit 1: IN (Base) 2: GND (Emitter) 3: OUT (Collector) SOT23 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics Symbol Rating Unit Supply voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistors Silicon NPN Epitaxial Type TDTC123J TDTC123J 1. Applications • Switching • Inverter Circuits • Driver Circuits 2. Features (1) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (2) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (3) Complementary to TDTA123J 3. Packaging and Internal Circuit 1: IN (Base) 2: GND (Emitter) 3: OUT (Collector) SOT23 4.