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TED1502
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, MIX, IF AMPLIFIER APPLICATIONS.
FEATURES . Small Reverse Transfer Capacitance : C re =0.7pF (Typ.) . Low Noise Figure : NF=2.5dB (Typ.) (f=100MHz)
.5.1 MAX
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IE PC
Tstj
RATING 40 30
UNIT
30
mA
-30
mA
250
mW
125
°C
-65-125
JEDEC
1. COLLECTOR Z. BASE 3. EMITTER
TO-92
TOSHIBA Weight : 0.