• Part: TED1502
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 200.73 KB
Download TED1502 Datasheet PDF
Toshiba
TED1502
FEATURES . Small Reverse Transfer Capacitance : C re =0.7p F (Typ.) . Low Noise Figure : NF=2.5d B (Typ.) (f=100MHz) .5.1 MAX Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC Tstj RATING 40 30 UNIT 30 m A -30 m A 250 m W °C -65-125 JEDEC 1. COLLECTOR Z. BASE 3. EMITTER TO-92 TOSHIBA Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Base-Emitter Voltage DC Current Gain Reverse Transfer Capacitance Transition Frequency vbe h FE (Note) Cre f T Noise Figure NF(1) Power Gain Note : h FE Classification NF(2) Gpe A:36~55, TEST CONDITION VCB=15V, I E=0 VC E=10V, Ic=lm A VCE=10V, I c =lm A V CE=6V, f=l MHz Vce=10V, Ic=lm A V C E=10V, I E =-lm A Rg =650O, f=l MHz VCE=6V, I E=-lm A f=100MHz, Fig. B:48~~75,...