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TED1602 - Silicon PNP Transistor

Key Features

  • . High Voltage and High Current : VcEO=-50V(Min. ), I c=-150mA(Max. . Excellent hpE Linearity : hFE (Ic=0.1mA)/hFE (Ic=2mA)=0.95(Typ. ) . Low Noise : NF=1.8dB(Typ . ) at f=lkHz . Complementary to TED1402 Unit in mm ^.

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Datasheet Details

Part number TED1602
Manufacturer Toshiba
File Size 79.44 KB
Description Silicon PNP Transistor
Datasheet download datasheet TED1602 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TED1602 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Voltage and High Current : VcEO=-50V(Min.), I c=-150mA(Max. . Excellent hpE Linearity : hFE (Ic=0.1mA)/hFE (Ic=2mA)=0.95(Typ.) . Low Noise : NF=1.8dB(Typ . ) at f=lkHz . Complementary to TED1402 Unit in mm ^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VcBO VCEO VEBO ic IB PC L stg RATING UNIT -50 V -50 -5 -150 mA -50 mA 400 mW 125 -65-125 1. COLLECTOR 2. BASE 3. EMITTER TO-92 SC-43 Weight : 0.