• Part: TED1602
  • Description: Silicon PNP Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 79.44 KB
Download TED1602 Datasheet PDF
Toshiba
TED1602
FEATURES . High Voltage and High Current : Vc EO=-50V(Min.), I c=-150m A(Max. . Excellent hp E Linearity : h FE (Ic=0.1m A)/h FE (Ic=2m A)=0.95(Typ.) . Low Noise : NF=1.8d B(Typ . ) at f=lk Hz . plementary to TED1402 Unit in mm ^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL Vc BO VCEO VEBO ic IB PC L stg RATING UNIT -50 -50 -5 -150 m A -50 m A 400 m W -65-125 1. COLLECTOR 2. BASE 3. EMITTER TO-92 SC-43 Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current Emitter Cut-off Current ICBO(l) VCB=-50V, I E=0 - ICB0(2) VCB=-50V,l E=0, Ta=125°C - l EBO VEB=-5V, I C =0 - - -0.1 dk - -10 - -0.1 uk DC Current Gain h FE (Note) VCE=-5V, I C=-2m...