The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TED1802
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
AUDIO POWER AMPLIFIAER APPLICATIONS.
FEATURES
. High hpE : hFE=106~300
. 1W Output Applications. . Complementary to TED1702.
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO v EBO ic IE PC
L stg
-35
-30
-5
-800
mA
800
mA
600
mW
150
-65-150 °C
1. COLLECTOR
2. BASF,
a EMITTER
EI AJ
TOSHIBA Weight : 0.21g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX.
Collector Cut-off Current
ICBO(l) V CB =-30V, I E=0
-
ICBO(2) VCB =-30V,I E=0, Ta=150°C -
-0.
TED1802 Datasheet
