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TG2213S - GaAs Linear Integrated Circuit GaAs Monolithic

Datasheet Summary

Description

RF port.

When VC1 = Hi and VC2 = Lo, this port is connected to RFcom.

An external DC blocking capacitor (C1) is required for internal DC bias blocking.

Features

  • Low insertion Loss: LOSS = 0.35dB (typ. ) @1.0 GHz = 0.45dB (typ. ) @2.5 GHz High isolation: ISL = 24dB (typ. ) @1.0 GHz = 22dB (typ. ) @2.5 GHz Low voltage operation: VCON = 0 V/2.7 V Small package: sES6 package (1.5 × 1.5 × 0.52 mm) Pin Assignment, Marking (top view) VC1 6 RFcom 5 VC2 4 Block Diagram VC1 6 RFcom 5 VC2 4 JEDEC JEITA.

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Datasheet Details

Part number TG2213S
Manufacturer Toshiba
File Size 163.83 KB
Description GaAs Linear Integrated Circuit GaAs Monolithic
Datasheet download datasheet TG2213S Datasheet
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    Full PDF Text Transcription

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    TG2213S TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2213S RF SPDT Switch Antenna switch for Bluetooth class 2, 3 Diversity antenna switching Filter switching for mobile communication Local signal switching Unit: mm Features · · · · Low insertion Loss: LOSS = 0.35dB (typ.) @1.0 GHz = 0.45dB (typ.) @2.5 GHz High isolation: ISL = 24dB (typ.) @1.0 GHz = 22dB (typ.) @2.5 GHz Low voltage operation: VCON = 0 V/2.7 V Small package: sES6 package (1.5 × 1.5 × 0.52 mm) Pin Assignment, Marking (top view) VC1 6 RFcom 5 VC2 4 Block Diagram VC1 6 RFcom 5 VC2 4 JEDEC JEITA TOSHIBA ― ― 2-2Q1A UP 1 RF1 2 GND 3 RF2 1 RF1 2 GND 3 RF2 Weight: 2.1 mg (typ.
    Published: |