TGM9398-25 - MICROWAVE POWER GaN AMPLIFIER

Datasheet Summary

Features

･BROAD BAND 2-STAGE.

Toshiba

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Datasheet Details

Part number	TGM9398-25
Manufacturer	Toshiba
File Size	503.09 KB
Description	MICROWAVE POWER GaN AMPLIFIER
Datasheet	TGM9398-25 Datasheet
Additional preview pages of the TGM9398-25 datasheet.

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FEATURES ･BROAD BAND 2-STAGE AMPLIFIER ･HIGH POWER Pout= 44.0dBm at Pin= 23.0dBm ･HIGH GAIN GL= 24dB(Typ) at Pin= 7dBm ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaN AMPLIFIER TGM9398-25 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power Drain Current Power Added Efficiency Linear Gain IDD=IDD1+ IDD2 SYMBOL CONDITIONS Pout IDD* add VDD1,VDD2= 24V IDDset= 1.2A @Pin= 23.0dBm f = 9.3 to 9.8GHz GL @Pin= 7dBm UNIT dBm A % dB MIN. 43.0   20 TYP. MAX. 44.0  2.6 3.5 38  24  ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL Drain- Source Voltage VDD1, VDD2 Gate- Source Voltage VGG1,VGG2 Drain Current IDD1 IDD2 Flange Temperature Tf Input Power Pin Storage Temperature Tstg UNIT V V A A °C dBm °C RATING 50 -10 1.25 7.

Published: Jun 20, 2020 |