TH58NVG4S0FBAID Datasheet | Toshiba

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG4S0FBAID is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks. The device has two 4328-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4328-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 14.5 Kbytes: 4328 bytes × 64 pages). The TH58NVG4S0FBAID is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. Features - Organization x8 Memory cell array 4328 × 256K × 8 × 2 Register 4328 × 8 Page size 4328 bytes Block size (256K + 14.5K) bytes - Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read - Mode control Serial input/output mand control - Number of valid blocks Min 8032 blocks Max 8192 blocks - Power supply VCC = 2.7V to 3.6V - Access time Cell array to register 30 µs max Serial Read Cycle 25 ns min (CL=100p F) - Program/Erase time Auto Page Program Auto Block Erase 300 µs/page typ. 3 ms/block typ. - Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 m A max. 30 m A max 30 m A max 100 µA max - Package P-TFBGA63-1011-0.80-001 (Weight: 0.160 g typ.) - 4bit ECC for each 512Byte is required. 1 2013-01-31C PIN ASSIGNMENT (TOP VIEW) 1 2 3 4 5 6 7 8 9 10 A NC NC NC...