• Part: TH58NVG4S0HTA20
  • Description: 16G-BIT (2G x 8 BIT) CMOS NAND E2PROM
  • Manufacturer: Toshiba
  • Size: 898.35 KB
Download TH58NVG4S0HTA20 Datasheet PDF
Toshiba
TH58NVG4S0HTA20
DESCRIPTION The TH58NVG4S0HTA20 is a single 3.3V 16 Gbit (18,253,611,008 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  8192blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes  16 Kbytes: 4352 bytes  64 pages). The TH58NVG4S0HTA20 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. FEATURES - Organization x8 Memory cell array 4352  128K  8  4 Register 4352 ...