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TH58NVG7T2ELA46 Datasheet

Manufacturer: Toshiba
TH58NVG7T2ELA46 datasheet preview

Datasheet Details

Part number TH58NVG7T2ELA46
Datasheet TH58NVG7T2ELA46-Toshiba.pdf
File Size 611.09 KB
Manufacturer Toshiba
Description 128 GBIT (4G x 8 BIT x 4) CMOS NAND E2PROM
TH58NVG7T2ELA46 page 2 TH58NVG7T2ELA46 page 3

TH58NVG7T2ELA46 Overview

The device has two 8568-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8568-byte increments. The Erase operation is implemented in a single block unit (1536 Kbytes + 70.5 Kbytes:8568 bytes x 192 pages). The TH58NVG7T2E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand...

TH58NVG7T2ELA46 Key Features

  • Organization
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase,Mu
  • Mode control Serial input/output
  • Number of valid blocks Min 10624 blocks Max 11120 blocks
  • Power supply VCC = 2.7 V to 3.6 V VCCQ = 2.7 V to 3.6 V
  • Access time
  • Program/Erase time Auto Page Program Auto Block Erase
  • Operating current Read (25 ns cycle) Program (avg.)
  • Package P
  • TLGA40
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