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THM81000S-12 - DRAM

Download the THM81000S-12 datasheet PDF (THM81000S-10 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for dram.

Features

  • 1,048,576 words by 8 bits organization.
  • Fast access time tRAC tAA tCAC tRC tpc RAS Access Time Column Address Access Time CAS Access Time Cycle Time Fast Page Mode Cycle Time TIDI8l000S/L-lO lOOns 50ns 35ns 190ns 55ns THM8l000S/L-12 l20ns 60ns 45ns 220ns 70ns.
  • Single power supply of 5V+lO%.
  • Low power 2,640mW MAX. Operating (TID18l000S/L-10) 2,200mW MAX. Operating (TID18l000S/L-12) 44mW MAX. Standby CAS before RAS refresh, RAS only refresh, Hidden refre.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (THM81000S-10-Toshiba.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 8 BIT DYNAMIC RAM MODULE THM81 000S/L-1 0/12 JOESCRIPTION/ The THM8l000S/L is a 1,048,576 words by 8 bits dynamic RAM module which assembled 8 pcs of TC5ll000J on the printed circuit board. The THM8l000S/L is optimized for application to the systems which are required high density and large capacity such as main memory of the computers and an image memory systems, and to the others which are requested compact size.
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