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THM91000L-12 - DRAM MODULE

Download the THM91000L-12 datasheet PDF. This datasheet also covers the THM91000S-10 variant, as both devices belong to the same dram module family and are provided as variant models within a single manufacturer datasheet.

Features

  • 1,048,576 words by 9 bits organization.
  • Fast access time __tRAC tAA.
  • RAS Access. Tim. e. _Column Address Access Time tCAC CAS Access Time tRC Cycle Time tpc Fast Page Node Cycle Time TH:-19l000S/L-10 lOOns 50ns 35ns 190ns 55ns THH.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (THM91000S-10-Toshiba.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
THM94000L-10 4/194/304 WORDS x 9 BIT DYNAMIC RAM MODULE Toshiba Semiconductor
THM94000L-80 4/194/304 WORDS x 9 BIT DYNAMIC RAM MODULE Toshiba Semiconductor
THM94000S 4/194/304 WORDS x 9 BIT DYNAMIC RAM MODULE Toshiba Semiconductor
THM94000S-10 4/194/304 WORDS x 9 BIT DYNAMIC RAM MODULE Toshiba Semiconductor
THM94000S-80 4/194/304 WORDS x 9 BIT DYNAMIC RAM MODULE Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
THM91000L-10 DRAM MODULE
THM91000S-10 DRAM MODULE
THM91000S-12 DRAM MODULE
THM405120ASG-10 DRAM Module
THM405120ASG-70 DRAM Module

Full PDF Text Transcription

Click to expand full text
TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 9 BIT DYNAMIC RAM MODULE THM91 000S/L-1 0/12 jOESCRI PTION I The THH9l000S/L is ~ 1,048,576 words by 9 bits dynamic RAM module vhich assembled 9 pes of TC511000J on the printed circuit board. The Tru~lOOOS/L is optimized for application to the systems which are required high density and large capacity such as main memory of the computers and an i~age memory systems, and to the others which are requested compact size. jFEATURES] • 1,048,576 words by 9 bits organization • Fast access time __tRAC tAA··· RAS Access. Tim.e._Column Address Access Time tCAC CAS Access Time tRC Cycle Time tpc Fast Page Node Cycle Time TH:-19l000S/L-10 lOOns 50ns 35ns 190ns 55ns THH<11000S/L-12 120ns _.
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