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THM91000S-10 - DRAM MODULE

Features

  • 1,048,576 words by 9 bits organization.
  • Fast access time __tRAC tAA.
  • RAS Access. Tim. e. _Column Address Access Time tCAC CAS Access Time tRC Cycle Time tpc Fast Page Node Cycle Time TH:-19l000S/L-10 lOOns 50ns 35ns 190ns 55ns THH.

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TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 9 BIT DYNAMIC RAM MODULE THM91 000S/L-1 0/12 jOESCRI PTION I The THH9l000S/L is ~ 1,048,576 words by 9 bits dynamic RAM module vhich assembled 9 pes of TC511000J on the printed circuit board. The Tru~lOOOS/L is optimized for application to the systems which are required high density and large capacity such as main memory of the computers and an i~age memory systems, and to the others which are requested compact size. jFEATURES] • 1,048,576 words by 9 bits organization • Fast access time __tRAC tAA··· RAS Access. Tim.e._Column Address Access Time tCAC CAS Access Time tRC Cycle Time tpc Fast Page Node Cycle Time TH:-19l000S/L-10 lOOns 50ns 35ns 190ns 55ns THH<11000S/L-12 120ns _.
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