TIM1414-5L Datasheet | Toshiba

Features ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1d B= 37.5d Bm at 14.0GHz to 14.5GHz ･HIGH GAIN G1d B= 6.0d B at 14.0GHz to 14.5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER Ga As FET RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1d B Gain pression Point Power Gain at 1d B Gain pression Point Drain Current SYMBOL CONDITIONS P1d B G1d B IDS1 VDS= 9V IDSset= 2.0A f= 14.0 to 14.5GHz UNIT d Bm d B Gain Flatness G d B Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test d Bc Po= 26.0d Bm, f= 5MHz (Single Carrier Level) Channel Temperature Rise Tch (VDS X IDS + Pin - P1d B) X...