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TIM1414-5L - Microwave Power GaAs FET

Datasheet Summary

Features

  • ･BROAD BAND.

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Datasheet Details

Part number TIM1414-5L
Manufacturer Toshiba
File Size 276.06 KB
Description Microwave Power GaAs FET
Datasheet download datasheet TIM1414-5L Datasheet
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Full PDF Text Transcription

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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 37.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 6.0dB at 14.0GHz to 14.5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1414-5L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS1 VDS= 9V IDSset= 2.0A f= 14.0 to 14.5GHz UNIT dBm dB A Gain Flatness G dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 26.0dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 150  MIN. 37.0 5.0    -42   TYP. MAX. 37.
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