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FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN
G1dB= 10.5dB at 5.3GHz to 5.9GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM5359-4UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 ∆G
VDS= 10V IDSset= 0.9A f = 5.3 to 5.9GHz
UNIT dBm dB
A dB
Power Added Efficiency
ηadd
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 25.5dBm, ∆f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
∆Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 150 Ω
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
MIN.
TIM5359-4UL Datasheet
